in gas Kinetics; byproducts: N2; stainless-steel reaction chamber; N2 buffer; reaction of Ag atoms (from Ag(CF3COCHCOCF3)P(CH3)3 as precursor) at temp. up to 623 K, N2O partial pressure up to 26 Torr;
参考文献
Campbell, Mark L.
Journal of Physical Chemistry A, 2003 , vol. 107, # 17 p. 3048 - 3053
Crestani, Marco G.; Hickey, Anne K.; Gao, Xinfeng; Pinter, Balazs; Cavaliere, Vincent N.; Ito, Jun-Ichi; Chen, Chun-Hsing; Mindiola, Daniel J.
Journal of the American Chemical Society, 2013 , vol. 135, # 39 p. 14754 - 14767
in neat (no solvent) using low pressure chemical vapor deposition; tube evacuated, heated to 1000°C; gas contg. SiH4 and N2O diluted in Ar entered, working pressure 10-200 Pa; SiO(x) thin film deposited on Si substrate at 748°C; annealed at 900-1100°C; Si nanocrystals embedded in SiO2 matrix obtained; monitored by Raman andIR absorption spectra and scanning electron microscopy;
in solid deposition from a preset SiH4-N2O mixt. in N2 as carrier gas onto the (111) face of previously cleaned in HF single-crystal silicon (at 625°C); then heating at 900°C for 30 min;;
参考文献
Wong, Joe; Thomas, John M.; Jefferson, David A.; Sparrow, Timothy G.; Koch, Edward F.
Journal of the Chemical Society, Chemical Communications, 1986 , # 4 p. 359 - 361
Bartholomew, Erika R.; Volpe, Emily C.; Wolczanski, Peter T.; Lobkovsky, Emil B.; Cundari, Thomas R.
Journal of the American Chemical Society, 2013 , vol. 135, # 9 p. 3511 - 3527
Bartholomew, Erika R.; Volpe, Emily C.; Wolczanski, Peter T.; Lobkovsky, Emil B.; Cundari, Thomas R.
Journal of the American Chemical Society, 2013 , vol. 135, # 9 p. 3511 - 3527
