in gas Kinetics; SH generated by laser photolysis of H2S (pressure of H2S below 0.02 Torr), excited N2O created by Raman excitation of N2O, N2O pressure in range of 0.5-4.0 Torr;
参考文献
Ravichandran, K.; Williams, Richard; Fletcher, T. Rick
Chemical Physics Letters, 1994 , vol. 217, p. 375 - 380
in neat (no solvent) Si(100) as substrate, plasma-enhanced chem. vapor deposition, Ar as carrier gas; annealing at 850, 900 or 950 °C for 90 min under N2;
in solid matrix
Irradiation (UV/VIS); irradiation of a matrix formed by condensing a 2percent mixture of N2O in Ar for 3 h (Xenon arc lamp), 12 K; FT-IR;
参考文献
Parnis, J. Mark; Hoover, Larry E.; Fridgen, Travis D.; Lafleur, Rick D.
Journal of Physical Chemistry, 1993 , vol. 97, # 41 p. 10708 - 10711
brush discharge between aluminium electrodes (field strength up to 2000 V/cm),at starting pressure 1-10 mmHg with current 10-50 mA,at the temp. of liq. air;
