反应条件
in gas heating SiHCl3 and H2 at 500°C in a reactor, passing over a Mg2Si charge which was heated upto 220°C, react. time: 4 h, condensing exit gases in liq. N2 traps; detn. by gas chromy., cooling the Mg2Si charge to room temp. under H2, deposition of Si on the reactor walls;
参考文献
Mulla, I. S.; Choube, A. C.; Dongare, M. K.; Sinha, A. P. B.
Indian Journal of Chemistry, Section A: Inorganic, Physical, Theoretical & Analytical, 1988 , vol. 27, # 9 p. 756 - 758
