反应条件
ammonia in neat (no solvent) byproducts: MgCl2; feeding separately SiCl4, NH3 and Ar into reactor with magnesium (Ar as carrier gas for Mg vapour), vapor-phase reaction (react. zone 950-1050°C); silicon sepn. in electrostatic precipitator (5-10 kV, 0.1 mA), purifn. by acid leaching (HCl) or vac. distn.; X-ray powder diffraction;
参考文献
Jong, B. W.; Slavens, G. J.; Traut, D. E.
Journal of Materials Science, 1992 , vol. 27, p. 6086 - 6090