in neat (no solvent)
other Radiation; prepn. using a microwave plasma jet that operates at atm. pressure usinghydrogen as work gas (frequence 2.45 GHz, input power 800 W, 100 kPa, f low rate 500 ml/min); silicon was deposited on the molybdenum substrate of the plasma reactor;
in gas
coatings on Si3N4 deposited over 2 h at 950 - 1050 °C and 10.7 kPa;
参考文献
Zemskova, Svetlana M.; Jones, Camille Y.; Cooley, Kevin M.; Haynes, J. Allen
Journal of the American Ceramic Society, 2004 , vol. 87, # 12 p. 2201 - 2207
