反应条件
in gaseous matrix low temperature double-plasma enhanced deposition (GaAs substrate, 290 or 600°C, Ar carrier gas, 6 ml/min, NH3 flow rate 38 ml/min, RF power 150 W, 13.56 MHz and 15 W, 27.12 MHz);
参考文献
Journal of the Electrochemical Society, , vol. 129, p. 2636 - 2637
