反应条件
in neat (no solvent, gas phase) plasma assisted chemical vapor deposition (Si substrate, 400°C, B2H6 (1percent in N2) flow 1800 sccm, NH3 flow 120 sccm, N2 flow 4200 sccm, RFpower 500 W, total pressure 5 Torr); X-ray diffraction;
参考文献
Journal of the Electrochemical Society, , vol. 141, # 6 p. 1633 - 1638