n-butyllithium in diethyl ether; hexane n-BuLi in hexane was added to a soln. of Me3SiCH2CN in Et2O at -78°C under N2, mixt. was stirred for 1 h, this cold mixt. was added dropwise to a soln. of Me3GeBr in Et2O at -78°C, reaction mixt. was stirred for 2 h at -78°C; aq. NH4Cl was added, mixt. extd. with Et2O, org. layer was washed with water and satd. aq. NaCl, dried over anhyd. MgSO4, concd. under reduced pressure, distilled in vacuo;

n-butyllithium in diethyl ether; hexane byproducts: (Me3Si)2CHCN; hexane soln. of n-BuLi was added dropwise to a soln. of Me3SiCH2CN in Et2O at -78°C under N2, stirred for 1 h, Et2O soln. of Me3GeBr added dropwise, stirring was continued for 2 h at -78°C and overnight at room temp.; further products; reaction mixt. was directly analyzed by a GC-MS system, structures of the products were detd. by analyses of their mass spectra;