反应条件
in hexane
under Ar atm. soln. R2GaH in hexane was treated with soln. bisalkyne in hexane at room temp. and heated under reflux for 15-20 h; soln. was cooled to room temp. and filtered, concd. in vacuo at room temp. and cooled to -80°C, Ga(CH2-t-Bu)3 was removed at 55°C (1E-3 Torr), recrystn. from n-hexane; elem. anal.;
参考文献
Uhl, Werner; Bock, Henrik R.; Breher, Frank; Claesener, Michael; Haddadpour, Sima; Jasper, Beate; Hepp, Alexander
Organometallics, 2007 , vol. 26, # 9 p. 2363 - 2369