in neat (no solvent) inert condition; addn. of I2 to mixt. of Mg and Ga, heating in vac. (150°C), chilling, addn. of EtI (50 - 70°C, 1 h), heating (90 °C, 4 h); distillation;
参考文献
Zakharkin; Gavrilenko
Synthesis and Reactivity in Inorganic and Metal-Organic Chemistry, 1999 , vol. 29, # 7 p. 1243 - 1247
in neat (no solvent) byproducts: H2N[C6H2(t-Bu)3]; Ar-atmosphere; heating at 65°C for 12 h; distillation off of GaEt3 (vac., room temp.), sublimation off of amine, recrystn. (pentane); elem. anal.;
in hexane under Ar; soln. of Et2GaH in n-hexane added to soln. of C6H3(C2CMe3)3 inn-hexane at room temp.; heated under reflux for 16 h; filtered; filtrate concd. under vac. at room temp.; ppt. collected;
参考文献
Uhl, Werner; Claesener, Michael; Haddadpour, Sima; Jasper, Beate; Hepp, Alexander
Dalton Transactions, 2007 , # 4 p. 417 - 423
in neat (no solvent) N2 or Ar-atmosphere; heating soln. of Et3Ga and Sn-compound at 52-53°C for 10.9 days (pptn.); evapn., washing (pentane); elem. anal.;
参考文献
Nutt, W. Rodger; Murray, Kelly J.; Gulick, James M.; Odom, Jerome D.; Ding, Yan; Lebioda, Lukasz
Organometallics, 1996 , vol. 15, # 6 p. 1728 - 1733
