反应条件
in neat (no solvent, solid phase) Ru-complex placed in metal organic chemical vapour deposition reactor, vaporized at 70-75°C under 330 Pa under N2 and H2, deposited on SiO2 on Si substrate heated at 155-175°C for 60-70 min, annealed at450°C for 30 s under H2;
参考文献
Dalton Transactions, , vol. 41, # 6 p. 1678 - 1682