in gaseous matrix Kinetics; Decomp. of Si2D6 and butadiene in argon -xenon, 830-1005 K , 2500+/-200torr;; detected by mass-spectra;;
参考文献
Dzarnoski, J.; Rickborn, S. F.; O'Neal, H. E.; Ring, M. A.
Organometallics, 1982 , vol. 1, p. 1217 - 1220
→
反应条件
in not given
参考文献
Arthur, Neville L.; Potzinger, Peter; Reimann, Bruno; Steenbergen, H. Peter
Journal of the Chemical Society, Faraday Transactions 2: Molecular and Chemical Physics, 1989 , vol. 85, p. 1447 - 1464
in gaseous matrix Kinetics; react. in a discharge flow system with MS spect. detection (O-atom generation by titration react. of N/NO), carrier gas Ar, room temp., pressure 400 Pa, coated reactor; product distribution; products not isolated, detd. by MS, GC;
参考文献
Horie, O.; Taege, R.; Reimann, B.; Arthur, N. L.; Potzinger, P.
Journal of Physical Chemistry, 1991 , vol. 95, # 11 p. 4393 - 4400
in gaseous matrix Kinetics; react. in a discharge flow system with MS spect. detection (O-atom generation by titration react. of N/NO), carrier gas Ar, room temp., pressure 400 Pa, coated reactor; product distribution; products not isolated, detd. by MS, GC;
参考文献
Horie, O.; Taege, R.; Reimann, B.; Arthur, N. L.; Potzinger, P.
Journal of Physical Chemistry, 1991 , vol. 95, # 11 p. 4393 - 4400
in solid matrix byproducts: SiHD3; Irradiation (UV/VIS); dilg. SiD4 with Ar (various ratios); codeposition with F2 dild. with Ar (various ratios) on a substrate at 13.+-1. K; UV-photolysis (220-1000 nm) for 1 h; annealing to 25.+-.2 K;; not isolated, identified by IR-spectroscopy; further products;;
参考文献
Journal of Physical Chemistry, , vol. 96, # 13 p. 5276 - 5284
in solid matrix byproducts: SiHD3; Irradiation (UV/VIS); dilg. SiD4 with Ar (various ratios); codeposition with F2 dild. with Ar (various ratios) on a substrate at 13.+-1. K; UV-photolysis (220-1000 nm) for 1 h; annealing to 25.+-.2 K;; not isolated, identified by IR-spectroscopy; further products;;
参考文献
McInnis, Thomas C.; Andrews, Lester
Journal of Physical Chemistry, 1992 , vol. 96, # 13 p. 5276 - 5284
