in neat (no solvent) formation on heating to 400°C with Si in a closed tube; further products;;
参考文献
Barthes, D.; Chaigneau, M.; Malangeau, P.
Comptes Rendus des Seances de l'Academie des Sciences, Serie C: Sciences Chimiques, 1968 , vol. 266, p. 1780 - 1783
Full Text Show Details
Gmelin Handbook: C: MVol.D2, 4.3.2.5.6, page 371 - 372
in gaseous matrix mixing of SiF4 and H2O with excess fluoride (SiF4 51.8 mbar + H2O 22.0 mbar) directly in the gas line, mixing with argon in ratios of 1/500; deposited onto aluminum substrate cooled at 12 K; monitoring by IR;
参考文献
Sennikov; Ignatov; Schrems
Russian Journal of Inorganic Chemistry, 2010 , vol. 55, # 3 p. 413 - 420
in neat (no solvent) formation on heating to 500°C with Si in a closed tube; further products;;
参考文献
Barthes, D.; Chaigneau, M.; Malangeau, P.
Comptes Rendus des Seances de l'Academie des Sciences, Serie C: Sciences Chimiques, 1968 , vol. 266, p. 1780 - 1783
Full Text Show Details
Gmelin Handbook: C: MVol.D2, 4.3.2.5.6, page 371 - 372
