二(三甲基甲硅烷基)乙炔合成路线 （共 218 条）
反应条件
tetracosan acid T=250°C; 1 h;
参考文献
Maier, Guenther; Neudert, Joerg; Wolf, Oliver; Pappusch, Dirk; Sekiguchi, Akira; Tanaka, Masanobu; Matsuo, Tsukasa
Journal of the American Chemical Society, 2002 , vol. 124, # 46 p. 13819 - 13826
反应条件
1: trimethylsilylacetylene With n-butyllithium in tetrahydrofuran T=-78°C; Metallation; 0.666667 h; 2: chloro-trimethyl-silane in tetrahydrofuran T=-78°C; Substitution; 1 h;
参考文献
Han, Sangdon; Kass, Steven R.
Journal of the Chemical Society - Perkin Transactions 1, 1999 , # 11 p. 1553 - 1558
参考文献
Maier, Guenther; Neudert, Joerg; Wolf, Oliver; Pappusch, Dirk; Sekiguchi, Akira; Tanaka, Masanobu; Matsuo, Tsukasa
Journal of the American Chemical Society, 2002 , vol. 124, # 46 p. 13819 - 13826
反应条件
lithium diisopropyl amide in tetrahydrofuran; diethyl ether T=-100°C; 3 h;
参考文献
Bulletin of the Chemical Society of Japan, , vol. 60, # 2 p. 777 - 778
反应条件
1: diazomethyl-trimethyl-silane With methyllithium in diethyl ether T=0°C; 0.5 h; 2: tris(trimethylsilyl)cyclopropenylium hexachloroantimonate Further stages. Further byproducts.;
参考文献
Journal of the American Chemical Society, , vol. 124, # 46 p. 13819 - 13826
反应条件
tetracosan acid T=260°C; 9 h;
参考文献
Journal of the American Chemical Society, , vol. 124, # 46 p. 13819 - 13826
反应条件
in not given (CH3)3SiCl and BrMgCCMgBr at 120/130°C;;
参考文献
Petrov, A. D.; Shchukovskaja, L. L.
Doklady Akademii Nauk SSSR, 1952 , vol. 86, p. 551 - 553
C. A., 1953 , p. 12225
Full Text Show Details
Gmelin Handbook: Si: MVol.C, 31, page 96 - 99
反应条件
in benzene T=70°C; 3 h;
参考文献
Tetrahedron Letters, , vol. 27, # 42 p. 5105 - 5108
反应条件
(Me2SiCp''2UBu)2O*2THF in tetrahydrofuran T=66°C; 15 h; Product distribution; Further Variations:Temperatures;
参考文献
Journal of the American Chemical Society, , vol. 128, # 29 p. 9350 - 9351
反应条件
in pentane T=-100°C; UV-irradiation;
参考文献
Journal of the American Chemical Society, , vol. 124, # 46 p. 13819 - 13826
