chlorine in not given reaction in an organic solvent;;

in gaseous matrix Irradiation (UV/VIS); photolysis by an 193 nm ArF excimer laser, diln. of the educt in N2;

chlorine byproducts: NaCl; dry NaSCN is filled in a drying tower, then a stream of dry chlorine is passed slowly through the tower at room temp. (under nitrogen); residual chlorine is displaced by nitrogen, the product is extracted from the tower, washed with acetone and then extracted for 24 h in a Soxhlet apparatus with MeOH and further 24 h with acetone, the product is left in vac. for some days, elem. anal.;

in neat (no solvent) dc discharge in a mixture of CS2 (1 mTorr) and N2 (30 mTorr), 200 mA, -30 to 0°C;;

sulfur at lighting photolysis with mixt. of C2N2 and COS (ratio 1:1 or 1:5);

in gaseous matrix Irradiation (UV/VIS); dilution of C2H5NCS in a large excess of N2, expanded (up to 120 psig) into a vac. chamber, photodissociation by irradiation with a KrF excimer laser; radical fragments collisonally cooled;

in neat (no solvent, gas phase) byproducts: CH3; electron impact; not isolated; monitored by fluorescence spectroscopy;

in ethanol 18°C, 1 h;

in water Kinetics; Irradiation (UV/VIS); (generation of (SCN)2(1-) radicals by a 248nm photolysis of NaSCN and Na2S2O8 with a KrF eximer laser), laser flash photolysis of radicals at 532nm, determination of rate constant and quantum yield ;; not isolated; monitoring of react. by absorption measurements of (SCN)2(1-) (500nm);;

in not given reaction in an organic solvent;;