2-(4-甲基苯基)苯并噻唑合成路线 （共 67 条）
反应条件
triethyl amine hydrochloride T=180°C; 3.5 h;
参考文献
Ohno; Mizukoshi; Izumi; Kato; Hori
Chemical and Pharmaceutical Bulletin, 1988 , vol. 36, # 2 p. 551 - 562
反应条件
1: hydrazine hydrate; water / tetrahydrofuran / 0.5 h / 0 °C / |Inert atmosphere 2: dichloro bis(acetonitrile) palladium(II); sodium carbonate; copper diacetate; 1,10-phenanthroline / dimethyl sulfoxide; 1,4-dioxane / 4.58 h / 20 - 100 °C / |Inert atmosphere View Scheme
参考文献
Organic and Biomolecular Chemistry, , vol. 10, # 37 p. 7479 - 7482
反应条件
triethyl amine hydrochloride T=150°C; Heating;
参考文献
Chemical and Pharmaceutical Bulletin, , vol. 31, # 5 p. 1780 - 1783
反应条件
1: 83 percent / Et3N / diethyl ether / 12 h 2: 80 percent / tetrahydrofuran / 0.25 h / 20 °C View Scheme
参考文献
Phosphorus, Sulfur and Silicon and the Related Elements, , vol. 179, # 9 p. 1883 - 1891
反应条件
1: CuCl2·2H2O; 1,10-phenanthroline; potassium carbonate; sulfur / water / 24 h / 100 °C 2: CuCl2·2H2O; 1,10-phenanthroline; potassium carbonate; sulfur / water / 24 h / 100 °C View Scheme
参考文献
Chemistry - A European Journal, , vol. 18, # 16 p. 4840 - 4843
反应条件
1: isopentyl nitrite / tetrahydrofuran / 0.5 h / |Reflux 2: FeCl3·6H2O; dipotassium peroxodisulfate / dimethyl sulfoxide; water / 12 h / 100 °C View Scheme
参考文献
Tetrahedron, , vol. 70, # 2 p. 245 - 250
反应条件
1.1: tetrahydrofuran / 3 h / 0 °C / |Inert atmosphere 1.2: 20 °C / |Inert atmosphere 2.1: 2,2'-azo-bisisobutyronitrile; tris-(trimethylsilyl)silane / toluene / 0.25 h / 110 °C / |Inert atmosphere View Scheme
参考文献
Journal of Organic Chemistry, , vol. 79, # 1 p. 251 - 266
反应条件
1: isopentyl nitrite / tetrahydrofuran / 0.5 h / |Reflux 2: FeCl3·6H2O; dipotassium peroxodisulfate / dimethyl sulfoxide; water / 12 h / 100 °C View Scheme
参考文献
Tetrahedron, , vol. 70, # 2 p. 245 - 250
反应条件
in tetrahydrofuran Heating;
参考文献
Journal of Organic Chemistry, , vol. 42, p. 441 - 443
反应条件
1: Ambient temperature 2: triethylamine hydrochloride / 150 °C / Heating View Scheme
参考文献
Chemical and Pharmaceutical Bulletin, , vol. 31, # 5 p. 1780 - 1783
