3,5-二甲基异恶唑-4-硼酸合成路线 (共 6 条)
反应条件
1: 4-bromo-3,5-dimethylisoxazole With n-butyllithium in tetrahydrofuran T=-65°C; 0.5 h; 2: tri-isopropoxy-borane in tetrahydrofuran T=-78 - 20°C; 16 h; 3: With water; ammonium chloride T=20°C;
参考文献
CONNEXIOS LIFE SCIENCES PVT. LTD.; RANGANATH RAO, Jagannath Madanahalli; ARUMUGAM, Nagarajan; ANSARI, Mohd Mudabbir; GUDLA, Chandrasekhar; PACHIYAPPAN, Shanmugam; RAMALINGAM, Manivannan; GEORGE, Jenson; ARUL, George Fernanda; BOMMEGOWDA, Y, Kenchegowda; ANGUPILLAI, Sathesh Kumar; KOTTAMALAI, Ramamoorthy; JIDUGU, Pradeep; RAO, D, Shivanageshwara
Patent: WO2012/11125 A1, 2012 ;
Location in patent: Page/Page column 148-149 ;
WO 2012/011125 A1
反应条件
1.1: N-bromosuccinmide / N,N-dimethyl-formamide / 3 h / 75 °C 2.1: n-butyllithium / tetrahydrofuran / 0.5 h / -65 °C 2.2: 16 h / -78 - 20 °C 2.3: 20 °C View Scheme
参考文献
WO2012/11125 A1, ;
WO 2012/011125 A1
反应条件
(i) EtMgBr, Et2O, THF, (ii) B(OMe)3, (iii) aq. HCl; Multistep reaction;
参考文献
Journal of Organometallic Chemistry, , vol. 9, p. 19 - 22
反应条件
sodium hydroxide; iodine
参考文献
Cogoli,A.; Gruenanger,P.
Journal of Organometallic Chemistry, 1967 , vol. 9, p. 19 - 22
反应条件
1.1: Ba(OH)2·8H2O / tetrakis(triphenylphosphine) palladium(0) / ethylene glycol dimethyl ether; water / 16 h / 80 °C 2.1: hydrogen; acetic acid / palladium 10 on activated carbon / ethanol / 24 h 3.1: 1 h / 130 °C 4.1: diphenylether / 0.75 h / 255 °C 5.1: sodium hydroxide; ethanol / Reflux 5.2: pH 4 6.1: trichlorophosphate / N,N-dimethyl-formamide / 5 h / Reflux 6.2: 1 h / 0 - 5 °C 7.1: N-ethyl-N,N-diisopropylamine / 1-methyl-pyrrolidin-2-one / 120 °C 8.1: potassium hydroxide; [bis(acetoxy)iodo]benzene / methanol / Cooling with ice View Scheme
参考文献
Bouillot, Anne Marie Jeanne; Donche, Frederic; Gellibert, Francoise Jeanne; Lamotte, Yann; Mirguet, Olivier
Patent: US2012/232074 A1, 2012 ;
反应条件
sodium carbonate; tetrakis(triphenylphosphine) palladium(0) in water; N,N-dimethyl-formamide T=160°C; 0.25 h; sealed tubemicrowave irradiation;
参考文献
TARGEGEN INC.
Patent: WO2009/46416 A1, 2009 ;
Location in patent: Page/Page column 54-55 ;
WO 2009/046416 A1