反应条件
in gas
byproducts: ethane, n-butane, ethene; Irradiation (UV/VIS); laser-induced photolytic chemical vapour deposition (LPCVD) of (C2H5)3GeH (1.6 kPa) at 193 nm and deposition of Ge on a reactor NaCl window;; IR and energy-dispersive X-ray spectroscopy;;
参考文献
Pola, Josef; Parsons, Jonathan P.; Taylor, Roger
Journal of the Chemical Society, Faraday Transactions, 1992 , vol. 88, # 12 p. 1637 - 1642
