in neat (no solvent) Warming of starting materials (in absence of solvent, vac. line) for 30 min to room temp.; Removal of Me3SnCl by passing the mixt. through a trap cooled to -95°C (toluene), IR and NMR identification of volatile resulting compd.;
in neat (no solvent) inert atmosphere (N2, Ar or high vac.), room temperature, equimolar amts. of halosilane/tinhydride, reactn. time 12 h; not isolated; IR spectroscopy (identified 41percent SiCl2H2 and 15percent SiH4 in product mixt.);
in neat (no solvent) SiF3SiHBr2, Me3SnH, and CF2CF2 (1:2:7 ratio) at -196°C are warmed (in absence of solvent, vac. line) to room temp. for 10 min.; Removal of Me3SnCl by passing the mixt. through a trap cooled to -95°C (toluene). IR spectrum indicates presence of only SiF3SiH3 and unreacted CF2CF2.;
