in diethyl ether; toluene byproducts: NaCl; AlCl3 in ether was added to suspn. NaAlH4 in toluene-ether in 30 min andstired for 4 h, soln. was filtered and cooled to 0°C, Me3N was a dded; solvent was removed;

1: AlCl3, aluminium chloride; lithium aluminium tetrahydride in diethyl ether T=-10°C; 0.00833333 h; 2: trimethylamine in diethyl ether T=-10°C; 5 h; Product distribution / selectivity;

in toluene crystd. from toluene;

according to R. Stecher, E. Wiberg, Chem. Ber. 75 (1942) 2003;

in benzene addn. of AlH3(NMe3) (0.27 mmol) in benzene to soln. of (C5H5)2ZrMe2 (0.40 mmol) in benzene at ambient temp. under dry N2;; pptn.; stirring for 20 min; filtering off (C5H5)2ZrH2 (elem. anal., IR) and drying under vac.; drying filtrate under vac.; redissolving in hexane and cooling to -78°C (identification of AlMe(NMe3) by NMR);;

hydrogen in 1,2,5-trimethyl-benzene High Pressure; a soln. of Al complex degassed, pressurized with 3 bar of H2, heated to 150°C for 1 h; allowed to settle, the supernatant removed, washed (n-pentane), dried (vac.); obtained as nanoparticles;

in neat (no solvent) Kinetics; thermal decompn. on Al- or Si-surfaces above 300 K;

in benzene soln. H3Al*NMe3 in benzene was treated dropwise with (n-Bu3Sn)2O and stirred for 16 h at room temp.; ppt. was filtered, washed with hexane and dried in vacuo;

in benzene soln. H3Al*NMe3 in benzene was treated dropwise with (n-Bu3Sn)2O and stirred for 16 h at room temp.; ppt. was filtered, washed with hexane and dried in vacuo;

in neat (no solvent) Si(100) as substrate, plasma-enhanced chem. vapor deposition, Ar as carrier gas; annealing at 850, 900 or 950 °C for 90 min under N2;