in neat (no solvent) byproducts: NH4Cl; reaction of SiCl4 with NH3 vapor at room temperature;; product mixture obtained;;

ammonia in neat (no solvent) byproducts: H2; decompn. reaction;;

in ammonia byproducts: NH4SH, NH4Cl;

in neat (no solvent)

in ammonia byproducts: NH4SH;

in neat (no solvent) decompn. at above 0°C; complete decompn. at 120°C;;

in neat (no solvent) at 0 °C or room temp. in vac.;;

in neat (no solvent) byproducts: NH4Cl; other Radiation; CO2 laser (110-160 W) chemical vapor prepn., stainless steel reactor; gas mixing in or above laser beam (avoiding low-temp. reactions); carrier gas N2, surrounding gas Ar; Si3N4 sepn. in electrostatic precipitator at 570 K; heating at 770 K for 15 h on removal remaining NH4Cl; IR spectroscopy, X-ray and electron diffraction, elem. anal.;

in gas React. induced by CO2-laser (570 nm, 50 W).;

HCl in not given byproducts: NH4Cl; reaction at room temperature;; side reactions cause additional consumption of HCl;