1,3-双(三氯甲硅烷基)丙烷合成路线 （共 10 条）
反应条件
trichlorosilane; tetra-n-butyl phosphonium chloride
参考文献
Korea Institute of Science and Technology
Patent: US6392077 B1, 2002 ;
反应条件
trichlorosilane; tetra-n-butyl phosphonium chloride T=130°C; 2 h;
参考文献
Gelest Inc.
Patent: US2005/27138 A1, 2005 ;
Location in patent: Page/Page column 7 ;
反应条件
trichlorosilane; tetra-n-butyl phosphonium chloride in toluene T=130°C; P=7757.43 - 18100.7 Torr; 1 h; Product distribution / selectivity;
参考文献
Gelest Inc.
Patent: US2005/27138 A1, 2005 ;
Location in patent: Page/Page column 3; 6 ;
参考文献
Schmidbaur, Hubert; Doerzbach, Cornelia
Zeitschrift fuer Naturforschung, B: Chemical Sciences, 1987 , vol. 42, # 9 p. 1088 - 1096
反应条件
trichlorosilane; triethylamine
参考文献
Korea Institute of Science and Technology
Patent: US6251057 B1, 2001 ;
反应条件
tetra-n-butyl phosphonium chloride T=150°C; 10 h; Inert atmosphere;
参考文献
SAMSUNG FINE CHEMICALS CO., LTD.
Patent: US2011/77420 A1, 2011 ;
Location in patent: Page/Page column 6 ;
反应条件
(CH2CHCH2)SiCl3 and HSiCl3 in presence of peroxide at 70-100°C under pressure;;
参考文献
Petrov, A. D.; Ponomarenko, V. A.
Doklady Akademii Nauk SSSR, 1953 , vol. 90, p. 387 - 390
C. A., 1954 , p. 5080
Full Text Show Details
Gmelin Handbook: Si: MVol.C, 67, page 185 - 187
反应条件
T=70 - 100°C; unter Druck;
参考文献
Burkhard; Krieble
Journal of the American Chemical Society, 1947 , vol. 69, p. 2689
Full Text View citing articles Show Details
Gen.Electric Co.
Patent: US2479374 , 1947 ;
参考文献
Gmelin Handbook: Si: MVol.C, 82, page 228 - 229
参考文献
Kumada; Habuchi
J.Inst.Polytech.Osaka City Univ.<C>, 1952 , vol. 3, p. 65,69,73
