1,1,3,3-四氯丙烯合成路线 （共 12 条）
反应条件
zinc in methanol T=50 - 60°C;
参考文献
HONEYWELL INTERNATIONAL INC.; Nair, Haridasan K.; Singh, Rajiv Ratna; Nalewajek, David; Poss, Andrew Joseph
Patent: US2013/211155 A1, 2013 ;
Location in patent: Paragraph 0018 ;
反应条件
1,1,1,3,3,3-hexachloro-propan-2-one T=370°C; P=20686.5 Torr; 0.00833333 h; Inert atmosphereGas phaseHastelloy C tube reactor; Product distribution / selectivity;
参考文献
DOW GLOBAL TECHNOLOGIES
Patent: US2011/87055 A1, 2011 ;
Location in patent: Page/Page column 6-7 ;
反应条件
T=200 - 500°C; Gas phase;
参考文献
Fukuju, Tadahiro; Yamamoto, Kikuo; Moriwaki, Masayuki; Komatsu, Yasutaka; Saito, Akihiro; Hosaka, Shunsuke; Tsunoda, Dai; Kawakami, Jun
Patent: US2012/53374 A1, 2012 ;
Location in patent: Page/Page column 9 ;
反应条件
tetrachloromethane T=325 - 430°C; P=14206.3 Torr; Gas phase; Product distribution / selectivity;
参考文献
DOW GLOBAL TECHNOLOGIES
Patent: US2011/87056 A1, 2011 ;
Location in patent: Page/Page column 6 ;
反应条件
aluminium trichloride; acetyl chloride
参考文献
Raulet,C.; Levas,M.
Comptes Rendus Hebdomadaires des Seances de l'Academie des Sciences, 1962 , vol. 255, p. 1406 - 1408
反应条件
hydrogenchloride; oxygen; CuCl2 on calcined alumina T=490°C; several conditions investigated; Product distribution;
参考文献
Potapov
Journal of applied chemistry of the USSR, 1985 , vol. 58, # 8 pt 2 p. 1773 - 1774
反应条件
hydrogen fluoride T=140°C; P=24032.3 - 25583.8 Torr; 4.5 h; ConcentrationPressureTemperatureReagent/catalystTime;
参考文献
US2013/261353 A1, ;
Paragraph 0061; 0062; 0063 ;
反应条件
hydrogen fluoride; titanium tetrachloride T=86°C; P=6965.99 Torr; 100 h; PressureTemperatureTimeConcentration;
参考文献
US2013/261354 A1, ;
Paragraph 0077; 0078; 0079 ;
反应条件
hydrogen fluoride; titanium tetrachloride T=85°C; P=6965.99 Torr; Industry scale; Product distribution / selectivity;
参考文献
US2011/201853 A1, ;
Page/Page column 13 ;
反应条件
hydrogen fluoride; titanium tetrachloride T=86°C; P=6965.99 Torr; 100 h; PressureTemperatureTimeConcentration;
参考文献
Merkel, Daniel C.; Pokrovski, Konstantin A.; Tung, Hsueh Sung
Patent: US2013/261354 A1, 2013 ;
Location in patent: Paragraph 0085; 0086; 0087 ;
