in gaseous matrix r. f. thermal plasma chemical vapour deposition (Ar carrier gas, Mo or Si substrate, substrate temp. 430-1100°C, deposition time 5 -10 min); secondary electron microscopy, X-ray diffraction;
in neat (no solvent, gas phase) low-temp. chem. vapor deposition of BN on Si using HN3 and B2H6 (diluted with He) at 5 Torr deposition pressure and 375 - 475°C substrate temp.; apparatus described;; detn. by RHEED, Raman TO mode and IR spectroscopy; decontaminated with H and O;;
byproducts: boron hydride; High Pressure; under N2; diborane and trihalogen-borane was added to benzene at -130°C, then in a closed autoclave the mixture was heated to 130°C for 90 min; at -195.8°C H2 was removed, at room temp. the residue of trihalogen-borane and diborane were removed;
