5-氟-2,4-二甲氧基苯胺合成路线 （共 7 条）
反应条件
hydrogen; palladium on activated charcoal in ethanol; ethyl acetate P=2068.6 Torr;
参考文献
Piotrowski, David W.; Rogers, Bruce N.; McWhorter JR., William W.; Walker, Daniel Patrick; Corbett, Jeffrey W.; Groppi JR., Vincent E.; Rudmann, Daniel G.
Patent: US2003/236287 A1, 2003 ;
Location in patent: Page 28 ;
US 20030236287 A1
反应条件
1: 92 percent / methanol 2: 91 percent / H2 / Pd/C / ethanol View Scheme
参考文献
Organic Letters, , vol. 8, # 4 p. 581 - 584
反应条件
1: 1.) NaNO2, HCl, 2.) H3PO2 / 1.) H2O, 15 min, 2.) H2O, 4 deg C, overnight, 20 deg C, 2 h 2: 95 percent / BBr3 / CH2Cl2 View Scheme
参考文献
Sun, Wei-Chuan; Gee, Kyle R.; Klaubert, Dieter H.; Haugland, Richard P.
Journal of Organic Chemistry, 1997 , vol. 62, # 19 p. 6469 - 6475
反应条件
hydrogenchloride; hypophosphorous acid; sodium nitrite 1.) H2O, 15 min, 2.) H2O, 4 deg C, overnight, 20 deg C, 2 h; Yield given. Multistep reaction;
参考文献
Sun, Wei-Chuan; Gee, Kyle R.; Klaubert, Dieter H.; Haugland, Richard P.
Journal of Organic Chemistry, 1997 , vol. 62, # 19 p. 6469 - 6475
反应条件
1.1: 68 percent / HCl; NaNO2; NaI / H2O / 16 h / 0 - 22 °C
2.1: 96 percent / acetonitrile / 0.01 h / microwave irradiation
3.1: 72 percent / BBr3 / CH2Cl2 / 40 °C
4.1: 82 percent / 220 °C
5.1: 65 percent / NaH / dimethylformamide
6.1: iPrMgCl / tetrahydrofuran / 2 h / -20 °C
6.2: tetrahydrofuran / 16 h / -20 - 22 °C
6.3: 72 percent / TFA / CH2Cl2 / 2 h / 22 °C
View Scheme
参考文献
Mottram, Laurie F.; Boonyarattanakalin, Siwarutt; Kovel, Rebecca E.; Peterson, Blake R.
Organic Letters, 2006 , vol. 8, # 4 p. 581 - 584
反应条件
1: 68 percent / HCl; NaNO2; NaI / H2O / 16 h / 0 - 22 °C
2: 96 percent / acetonitrile / 0.01 h / microwave irradiation
3: 72 percent / BBr3 / CH2Cl2 / 40 °C
View Scheme
参考文献
Mottram, Laurie F.; Boonyarattanakalin, Siwarutt; Kovel, Rebecca E.; Peterson, Blake R.
Organic Letters, 2006 , vol. 8, # 4 p. 581 - 584
反应条件
in ethyl acetate; toluene
1.5 h; Heating / reflux;
参考文献
Piotrowski, David W.; Rogers, Bruce N.; McWhorter JR., William W.; Walker, Daniel Patrick; Corbett, Jeffrey W.; Groppi JR., Vincent E.; Rudmann, Daniel G.
Patent: US2003/236287 A1, 2003 ;
Location in patent: Page 28 ;
US 20030236287 A1
