copper in not given Cu-powder pre-treated with H2 at 400°C; pot-to pot distn. (-78°C), then distn. through P2O5 or 5A molecular sieves;

in neat (no solvent) CVD deposition at 500°C/<0.01 Torr;

in gaseous matrix thermal decomposition (H2 carrier gas, mixt. H2/Pt(PF3)4 10:1, total pressure 2.2E-5 Torr, 290°C, 30 min), slow cooling to room temp.; Auger and X-Ray photoelectron spectroscopic anal.;

in neat (no solvent) CVD deposition at 500°C/<0.01 Torr;