1,3-二溴-2-(2-溴乙氧基)苯合成路线 （共 7 条）
反应条件
sodium hydroxide in water Heating / reflux;
参考文献
BIOVITRUM AB
Patent: WO2005/58858 A1, 2005 ;
Location in patent: Page/Page column 168 ;
WO 2005/058858 A1
反应条件
sodium hydroxide in water 17 h; Reflux;
参考文献
MEMORY PHARMACEUTICALS CORPORATION; SCHUMACHER, Richard, A.; TEHIM, Ashok; XIE, Wenge
Patent: WO2010/24980 A1, 2010 ;
Location in patent: Page/Page column 114 ;
反应条件
n-butyllithium in tetrahydrofuran; hexane T=-80°C; 0.5 h;
参考文献
Kerrigan, Frank; Martin, Claire; Thomas, Gerard H.
Tetrahedron Letters, 1998 , vol. 39, # 15 p. 2219 - 2222
反应条件
n-butyllithium in tetrahydrofuran; hexane T=-78 - 0°C; Cooling with ethanol-dry ice;
参考文献
BIOVITRUM AB
Patent: WO2005/58858 A1, 2005 ;
Location in patent: Page/Page column 168-169 ;
WO 2005/058858 A1
反应条件
1: With n-butyllithium in tetrahydrofuran
T=-100°C;
2: With sulfur dioxide in tetrahydrofuran
T=-40°C;
3: With N-chloro-succinimide in dichloromethane
T=0°C; 1 h;
参考文献
Memory Pharmaceuticals Corporation
Patent: US2010/22581 A1, 2010 ;
Location in patent: Page/Page column 44-45 ;
US 20100022581 A1
反应条件
1: With n-butyllithium in tetrahydrofuran
T=-100°C; 1.5 h;
2: With sulfur dioxide in tetrahydrofuran
T=-100 - -85°C; 2 h;
3: With N-chloro-succinimide in dichloromethane
T=0°C; 1 h;
参考文献
Memory Pharmaceuticals Corporation
Patent: US2010/29629 A1, 2010 ;
Location in patent: Page/Page column 63 ;
US 20100029629 A1
反应条件
1: 86 percent / n-butyllithium / tetrahydrofuran; hexane / 0.5 h / -80 °C
2: tri(o-tolyl)phosphine, bis(dibenzylideneacetone)palladium(O), sodium tert-butoxide / toluene / 100 °C
3: trifluoroacetic acid / CH2Cl2 / Ambient temperature
View Scheme
参考文献
Kerrigan, Frank; Martin, Claire; Thomas, Gerard H.
Tetrahedron Letters, 1998 , vol. 39, # 15 p. 2219 - 2222
