1,1,1,2,3-五氯丙烷合成路线 （共 52 条）
反应条件
hydrogen fluoride; antimony(V) pentachloride T=100°C; 2 h;
参考文献
ARKEMA INC.
Patent: WO2009/3157 A1, 2008 ;
Location in patent: Page/Page column 14-15 ;
反应条件
T=400°C; P=750.075 Torr; 0.0130556 h; Inert atmosphere;
参考文献
DAIKIN INDUSTRIES, LTD.; NOSE, Masatoshi; SUZUKI, Atsushi
Patent: WO2011/65574 A1, 2011 ;
Location in patent: Page/Page column 12-13 ;
反应条件
hydrogen fluoride T=340°C; P=760.051 Torr; 86 h; Gas phase; Product distribution / selectivity;
参考文献
DAIKIN INDUSTRIES, LTD.; NOSE, Masatoshi; KOMATSU, Yuzo
Patent: WO2013/15068 A1, 2013 ;
Location in patent: Page/Page column 13-15; 18 ;
反应条件
hydrogen fluoride T=380°C; P=760.051 Torr; 86 h; Gas phase; Product distribution / selectivity;
参考文献
ARKEMA FRANCE; DEUR-BERT, Dominique; PIGAMO, Anne; DOUCET, Nicolas; WENDLINGER, Laurent
Patent: WO2012/98420 A1, 2012 ;
Location in patent: Page/Page column 14 ;
反应条件
T=300°C; P=2250.23 Torr; 550 h; Gas phase; Product distribution / selectivity;
参考文献
ARKEMA FRANCE; DEUR-BERT, Dominique; PIGAMO, Anne; DOUCET, Nicolas; WENDLINGER, Laurent
Patent: WO2012/98420 A1, 2012 ;
Location in patent: Page/Page column 14-15 ;
反应条件
hydrogen fluoride in water T=400°C; P=750.075 Torr; 8 h; Inert atmosphere;
参考文献
DAIKIN INDUSTRIES, LTD.; KISHIMOTO, Masayuki; KOMATSU, Yuzo
Patent: WO2013/141409 A1, 2013 ;
Location in patent: Page/Page column 13 ;
反应条件
hydrogen fluoride; antimony(V) pentachloride; 1-ethyl-3-methyl-1H-imidazolium chloride in pentachloroethane T=135°C; P=6750.68 Torr; 5 h; Autoclave; Product distribution / selectivity;
参考文献
ARKEMA FRANCE; WENDLINGER, Laurent; BONNET, Philippe; PIGAMO, Anne; DOUCET, Nicolas
Patent: WO2012/52797 A1, 2012 ;
Location in patent: Page/Page column 23-24 ;
反应条件
hydrogen fluoride T=400°C; 3 h; Gas phaseInert atmosphere; Product distribution / selectivity;
参考文献
DAIKIN INDUSTRIES, LTD.; KISHIMOTO, Masayuki; KOMATSU, Yuzo
Patent: WO2013/141409 A1, 2013 ;
Location in patent: Page/Page column 12 ;
反应条件
hydrogen fluoride T=340°C; P=760.051 Torr; 86 h; Gas phase; Product distribution / selectivity;
参考文献
DAIKIN INDUSTRIES, LTD.; NOSE, Masatoshi; KOMATSU, Yuzo
Patent: WO2013/15068 A1, 2013 ;
Location in patent: Page/Page column 13-15; 18 ;
反应条件
hydrogen fluoride T=402°C; 15 h; Gas phaseInert atmosphere;
参考文献
DAIKIN INDUSTRIES, LTD.; NOSE, Masatoshi; SUZUKI, Atsushi; YAMASHITA, Tsuneo; KATSUKAWA, Kenichi
Patent: WO2010/123148 A1, 2010 ;
Location in patent: Page/Page column 18; 19; 20; 26 ;
