1,1-二甲基硅杂环丁烷 二甲基三亚甲基硅烷合成路线 （共 97 条）
反应条件
T=700 - 750°C; P=0.0001 - 0.1 Torr; other monosilacyclobutanes, also deuterated, var. temp.; Mechanism;
参考文献
Nefedov, O. M.; Maltsev, A. K.; Khabashesku, V. N.; Korolev, V. A.
Journal of Organometallic Chemistry, 1980 , vol. 201, # 1 p. 123 - 136
反应条件
T=680°C; other temperatures; Product distribution;
参考文献
Hassner, Alfred; Soderquist, John A.
Tetrahedron Letters, 1980 , vol. 21, p. 429 - 432
反应条件
P=1 Torr; Ambient temperatureIrradiationvariation of wavelengths, temperature, gases/pressures; Product distribution;
参考文献
Brix, Th.; Arthur, N. L.; Potzinger, P.
Journal of Physical Chemistry, 1989 , vol. 93, # 25 p. 8193 - 8197
反应条件
in dichloromethane
T=22°C; Rate constantMechanism;
参考文献
Washburne, Stephen S.; Szendroi, Robert
Journal of Organic Chemistry, 1981 , vol. 46, # 4 p. 691 - 693
反应条件
hydrogenchloride
T=499.9°C; P=0.5 Torr; Ea; Rate constantThermodynamic data;
参考文献
Davidson, Iain M. T.; Dean, Christopher E.; Lawrence, F. Timothy
Journal of the Chemical Society, Chemical Communications, 1981 , # 2 p. 52 - 53
反应条件
hydrogenchloride
T=530°C; Heatingthermal reaction;
参考文献
Kalasinsky, V. F.; Pechsiri, S.
Journal of Physical Chemistry, 1982 , vol. 86, # 26 p. 5110 - 5115
反应条件
hydrogenchloride
IrradiationIR laser-induced reaction;
参考文献
Kalasinsky, V. F.; Pechsiri, S.
Journal of Physical Chemistry, 1982 , vol. 86, # 26 p. 5110 - 5115
