1,1-二甲基硅杂环丁烷 二甲基三亚甲基硅烷合成路线 （共 97 条）
反应条件
T=670°C; Further byproducts given;
参考文献
Conlin,R.T.; Huffaker,H.B.; Kwak,Y.W.
Journal of the American Chemical Society, 1985 , vol. 107, p. 731
反应条件
tungsten in HEL
T=900°C; P=12 Torr; Gas phase; Mechanism; Temperature;
参考文献
Tong; Shi
Journal of Mass Spectrometry, 2010 , vol. 45, # 2 p. 215 - 222
参考文献
Conlin, Robert T.; Wood, David L.
Journal of the American Chemical Society, 1981 , vol. 103, # 7 p. 1843 - 1844
参考文献
Conlin, Robert T.; Wood, David L.
Journal of the American Chemical Society, 1981 , vol. 103, # 7 p. 1843 - 1844
反应条件
T=670°C; Further byproducts given;
参考文献
Conlin,R.T.; Huffaker,H.B.; Kwak,Y.W.
Journal of the American Chemical Society, 1985 , vol. 107, p. 731
参考文献
Auner, N.; Grobe, J.
Journal of Organometallic Chemistry, 1980 , vol. 188, # 2 p. 151 - 178
参考文献
Auner, N.; Grobe, J.
Journal of Organometallic Chemistry, 1980 , vol. 188, # 2 p. 151 - 178
反应条件
water
T=650 - 720°C; photoionization; Product distribution;
参考文献
Koenig, T.; McKenna, William
Journal of the American Chemical Society, 1981 , vol. 103, # 5 p. 1212 - 1213
反应条件
T=560°C; Title compound not separated from byproducts;
参考文献
Gusel'Nikov, L. E.; Volkova, V. V.; Avakyan, V. G.; Volnina, E. A.; Zaikin, V. G.; et al.
Journal of Organometallic Chemistry, 1984 , vol. 271, # 1-3 p. 191 - 206
反应条件
T=1180°C; other temperatures (other plates); pyrolysis of 1,1-dimethylsilacyclobutane; Product distribution;
参考文献
Brix, Th.; Arthur, N. L.; Potzinger, P.
Journal of Physical Chemistry, 1989 , vol. 93, # 25 p. 8193 - 8197
