1,2-二(三氯甲硅基)乙烷合成路线 （共 37 条）
反应条件
benzene in neat (no solvent) HSiCl3 and benzene in presence of BF3 at about 300°C under pressure;;
参考文献
US2626266 , ;
C. A., , p. 7636
反应条件
platinum in neat (no solvent) HSiCl3 and acetylene with platinized asbestos as catalyst at 175°C under pressure;;
参考文献
Si: MVol.C, 43, page 128 - 130
GB670617 , ;
C. A., , p. 8894
反应条件
trichlorosilane; tetra-n-butyl phosphonium chloride T=150°C; 3 h; Inert atmospheresealed tube;
参考文献
Organometallics, , vol. 29, # 13 p. 3054 - 3057
反应条件
copper; silicon T=370°C;
参考文献
Zhurnal Obshchei Khimii, , vol. 26, p. 1246; engl. Ausg. S. 1409
反应条件
copper; silicon T=370 - 380°C;
反应条件
copper in neat (no solvent) Si-Cu (9:1) and 1,2-dichloroethane in presence of N2 at 370-380°C;;
参考文献
US2381000 , ;
US2381002 , ;
C. A., , p. 4888
反应条件
T=70 - 100°C; unter Druck;
参考文献
Journal of the American Chemical Society, , vol. 69, p. 2689
US2479374 , ;
参考文献
Journal of the American Chemical Society, , vol. 69, p. 2689
反应条件
dihydrogen hexachloroplatinate Heatingdetermination of side products; Product distributionMechanism;
参考文献
J. Gen. Chem. USSR (Engl. Transl.), , vol. 55, # 8 p. 1795 - 1799,1594 - 1597
反应条件
dihydrogen hexachloroplatinate Heatingdetermination of side products; Product distributionMechanism;
参考文献
J. Gen. Chem. USSR (Engl. Transl.), , vol. 55, # 8 p. 1795 - 1799,1594 - 1597
