1-氯-1,2,2,2-四氟乙烷合成路线 （共 83 条）
反应条件
hydrogen fluoride; Catalyst M-Chromium oxide T=300 - 370°C; 0.000916667 h;
参考文献
E.I. DU PONT DE NEMOURS AND COMPANY; Nappa, Mario, J.
Patent: WO2004/18396 A1, 2004 ;
Location in patent: Page 18-19 ;
反应条件
hydrogen fluoride; fluorinated chromium oxide T=320°C; P=2353.83 Torr; 60 h;
参考文献
Daikin Industries, Ltd.
Patent: US6392106 B1, 2002 ;
Location in patent: Page column 5-7 ;
反应条件
hydrogen fluoride; cobalt-substituted chromium oxide (Cr/Co 90/10) T=300 - 370°C; 0.000916667 h;
参考文献
E.I. DU PONT DE NEMOURS AND COMPANY; Nappa, Mario, J.
Patent: WO2004/18396 A1, 2004 ;
Location in patent: Page 18-19 ;
反应条件
hydrogen fluoride; cobalt-substituted chromium oxide (Cr/Co 90/10, 12-20 mesh, (1.68 to 0.84 mm) ), prepared from chromium (III) nitrate, cobalt (II) nitrate, ammonia, ammonia nitrate (400°C) T=200 - 425°C; 9.33333 h;
参考文献
WO2004/18396 A1, ;
Page 14 ;
反应条件
hydrogen fluoride; cobalt-substituted chromium oxide (Cr/Co 90/10, 12-20 mesh, (1.68 to 0.84 mm) ), prepared from chromium (III) nitrate, cobalt (II) nitrate, ammonia (400°C) T=200 - 425°C; 9.33333 h;
参考文献
WO2004/18396 A1, ;
Page 13-14 ;
反应条件
hydrogen fluoride; Catalyst M-Chromium oxide T=200 - 425°C; 9.33333 h;
参考文献
WO2004/18396 A1, ;
Page 12-13 ;
反应条件
hydrogen fluoride; chromium-based fluorination catalyst T=130 - 430°C; P=3000.3 - 3375.34 Torr;
参考文献
Ohno, Hiromoto; Ohi, Toshio
Patent: US2003/191350 A1, 2003 ;
Location in patent: Page/Page column 7-10 ;
反应条件
hydrogen fluoride; cobalt-substituted chromium oxide (Cr/Co 95/5, 12-20 mesh, (1.68 to 0.84 mm) ), prepared from chromium (III) nitrate, cobalt (II) nitrate, ammonia, ammonia nitrate (400°C) T=200 - 425°C; 9.33333 h;
参考文献
WO2004/18396 A1, ;
Page 16-17 ;
反应条件
1: With hydrogen fluoride 2: With hydrogen T=220°C; P=1125.11 Torr; In the presence of catalyst;
参考文献
SHOWA DENKO K. K.
Patent: WO2004/5226 A1, 2004 ;
Location in patent: Page 12-13 ;
反应条件
hydrogen fluoride; oxygen; chromium oxyfluoride T=350°C; P=1200.12 Torr; Gas phase; Product distribution / selectivity;
参考文献
Nose, Masatoshi; Takahashi, Kazuhiro; Shibanuma, Takashi
Patent: US2010/268002 A1, 2010 ;
Location in patent: Page/Page column 4-5 ;
