5-溴-2-氯吡啶-3-醇合成路线 (共 9 条)
反应条件
sodium hydroxide; sodium hypochlorite in water T=20°C; 16 h;
参考文献
ABBOTT LABORATORIES
Patent: EP1428824 A1, 2004 ;
Location in patent: Page 37 ;
反应条件
hydrogen bromide; acetic acid 1.5 h; RefluxInert atmosphere;
参考文献
Breteche, Anne; Marchand, Pascal; Nourrisson, Marie-Renee; Hautefaye, Patrick; De Nanteuil, Guillaume; Duflos, Muriel
Tetrahedron, 2011 , vol. 67, # 26 p. 4767 - 4773
反应条件
sodium hydroxide in water
参考文献
Schrimpf, Michael R.; Tietje, Karin R.; Toupence, Richard B.; Ji, Jianguo; Basha, Anwer; Bunnelle, William H.; Daanen, Jerome F.; Pace, Jennifer M.; Sippy, Kevin B.
Patent: US2002/19388 A1, 2002 ;
反应条件
1.1: HBr / acetic acid / 16 h / 20 °C 1.2: NH4OH / methanol / 12 h / 20 °C 2.1: 11.20 g / NaOH; aq. NaOCl / H2O / 16 h / 20 °C View Scheme
参考文献
Breteche, Anne; Marchand, Pascal; Nourrisson, Marie-Renee; Hautefaye, Patrick; De Nanteuil, Guillaume; Duflos, Muriel
Tetrahedron, 2011 , vol. 67, # 26 p. 4767 - 4773
反应条件
sodium hydroxide; sodium hypochlorite in water T=20°C; 54 h;
参考文献
Morgentin, Remy; Jung, Frederic; Lamorlette, Maryannick; Maudet, Mickael; Menard, Morgan; Ple, Patrick; Pasquet, Georges; Renaud, Fabrice
Tetrahedron, 2009 , vol. 65, # 4 p. 757 - 764
反应条件
1: POCl3 / CH2Cl2 2: 84 percent / HBr; AcOH View Scheme
参考文献
Breteche, Anne; Marchand, Pascal; Nourrisson, Marie-Renee; Hautefaye, Patrick; De Nanteuil, Guillaume; Duflos, Muriel
Tetrahedron, 2011 , vol. 67, # 26 p. 4767 - 4773
反应条件
1: 75 percent / NaH / dimethylformamide 2: 100 percent / m-CPBA / CH2Cl2 3: POCl3 / CH2Cl2 4: 84 percent / HBr; AcOH View Scheme
参考文献
Breteche, Anne; Marchand, Pascal; Nourrisson, Marie-Renee; Hautefaye, Patrick; De Nanteuil, Guillaume; Duflos, Muriel
Tetrahedron, 2011 , vol. 67, # 26 p. 4767 - 4773
反应条件
in diethyl ether; N,N-dimethyl-formamide
反应条件
caesium carbonate in N,N-dimethyl-formamide
T=20°C;
参考文献
MERCK SHARP and DOHME CORP.; WOLKENBERG, Scott; BARROW, James, C.; HARRISON, Scott, T.; TROTTER, B. Wesley; NANDA, Kausik, K.; MANLEY, Peter, J.; ZHAO, Zhijian
Patent: WO2011/109261 A1, 2011 ;
Location in patent: Page/Page column 37 ;