4-(2-甲氧基-苯基)-丁酸合成路线 （共 34 条）
反应条件
potassium hydroxide; hydrazine hydrate; diethylene glycol T=200°C; Erwaermen des Reaktionsprodukts mit wss. Natronlauge und Dimethylsulfat;
参考文献
Journal of the American Chemical Society, , vol. 71, p. 2877
反应条件
1: With sodium hydroxide in ethanol 2: With hydrogenchloride in water
参考文献
Mimori, Seisuke; Okuma, Yasunobu; Kaneko, Masayuki; Kawada, Koichi; Nomura, Yasuyuki; Murakami, Yasuoki; Hamana, Hiroshi
Chemistry Letters, 2013 , vol. 42, # 9 p. 1051 - 1052
反应条件
1: SOCl2 / benzene / Heating 2: benzene; diethyl ether 3: 10 percent / benzene / 3.5 h / Irradiation View Scheme
参考文献
Tetrahedron, , vol. 45, # 5 p. 1441 - 1446
反应条件
1: cadmium chloride; diethyl ether; benzene / Erwaermen der vom Aether befreiten Reaktionsloesung mit Bernsteinsaeure-methylester-chlorid 2: potassium hydroxide; diethylene glycol; hydrazine hydrate / 200 °C / Erwaermen des Reaktionsprodukts mit wss. Natronlauge und Dimethylsulfat View Scheme
参考文献
Journal of the American Chemical Society, , vol. 71, p. 2877
反应条件
1: 80 percent / 8.5percent NaOH / 45 °C 2: 75 percent / diethyl ether / 0 °C 3: 72 percent / SnCl2, HI, HCl / acetic acid 4: SOCl2 / benzene / Heating 5: 88 percent / benzene; diethyl ether 6: 3 percent / benzene / 9.5 h / Irradiation 7: SOCl2 / benzene / Heating 8: benzene; diethyl ether 9: 10 percent / benzene / 3.5 h / Irradiation View Scheme
参考文献
Tetrahedron, , vol. 45, # 5 p. 1441 - 1446
反应条件
1: 75 percent / diethyl ether / 0 °C 2: 72 percent / SnCl2, HI, HCl / acetic acid 3: SOCl2 / benzene / Heating 4: 88 percent / benzene; diethyl ether 5: 3 percent / benzene / 9.5 h / Irradiation 6: SOCl2 / benzene / Heating 7: benzene; diethyl ether 8: 10 percent / benzene / 3.5 h / Irradiation View Scheme
参考文献
Tetrahedron, , vol. 45, # 5 p. 1441 - 1446
反应条件
1: SOCl2 / benzene / Heating 2: 88 percent / benzene; diethyl ether 3: 3 percent / benzene / 9.5 h / Irradiation 4: SOCl2 / benzene / Heating 5: benzene; diethyl ether 6: 10 percent / benzene / 3.5 h / Irradiation View Scheme
参考文献
Tetrahedron, , vol. 45, # 5 p. 1441 - 1446
反应条件
1: 99 percent / 10percent aq. NaOH, Na, Hg 2: SOCl2 / benzene / Heating 3: benzene; diethyl ether 4: 10 percent / benzene / 3.5 h / Irradiation View Scheme
参考文献
Tetrahedron, , vol. 45, # 5 p. 1441 - 1446
反应条件
1: 3 percent / benzene / 9.5 h / Irradiation 2: SOCl2 / benzene / Heating 3: benzene; diethyl ether 4: 10 percent / benzene / 3.5 h / Irradiation View Scheme
参考文献
Tetrahedron, , vol. 45, # 5 p. 1441 - 1446
反应条件
1: 72 percent / SnCl2, HI, HCl / acetic acid 2: SOCl2 / benzene / Heating 3: 88 percent / benzene; diethyl ether 4: 3 percent / benzene / 9.5 h / Irradiation 5: SOCl2 / benzene / Heating 6: benzene; diethyl ether 7: 10 percent / benzene / 3.5 h / Irradiation View Scheme
参考文献
Tetrahedron, , vol. 45, # 5 p. 1441 - 1446
