4,6-二甲基-2-氧-2H-吡喃-5-甲酸乙酯合成路线 （共 36 条）
反应条件
sodium hydroxide in water T=70°C; 1 h;
参考文献
Jung; Lowe III; Lyster; et al.
Tetrahedron, 1984 , vol. 40, # 22 p. 4751 - 4766
反应条件
dipotassium hydrogenphosphate; sodium dihydrogenphosphate in ethanol; water 480 h; fermentation process;
参考文献
Sakurai, Ikuo; Miyajima, Hisae; Akiyama, Katsuyoshi; Shimizu, Sakae; Yamamoto, Yuzuru
Chemical and Pharmaceutical Bulletin, 1988 , vol. 36, p. 2003 - 2011
反应条件
1: bromine / chloroform / 24 h / 0 - 20 °C 2: potassium hydroxide / 1,4-dioxane / 0.83 h / 105 °C View Scheme
参考文献
Al-Majid, Abdullah M. A.; Al-Othman, Zeid A.; Islam, Mohammad Shahidul
Helvetica Chimica Acta, 2012 , vol. 95, # 2 p. 268 - 277
反应条件
1: 95 percent / NaOH / H2O / 1 h / 70 °C 2: 85 percent / Ac2O / 0.5 h / 70 °C 3: 80 percent / diethyl ether / 12 h / 25 °C 4: 2.) Ag2O, MgSO4 / 1.) xylene, reflux, 5 d; 2.) RT, 12 h 5: 100 percent / HBr / acetic acid / 5 h / Heating View Scheme
参考文献
Jung; Lowe III; Lyster; et al.
Tetrahedron, 1984 , vol. 40, # 22 p. 4751 - 4766
反应条件
bromine in chloroform T=0 - 20°C; 24 h;
参考文献
Al-Majid, Abdullah M. A.; Al-Othman, Zeid A.; Islam, Mohammad Shahidul
Helvetica Chimica Acta, 2012 , vol. 95, # 2 p. 268 - 277
反应条件
1: 95 percent / NaOH / H2O / 1 h / 70 °C 2: 85 percent / Ac2O / 0.5 h / 70 °C 3: 80 percent / diethyl ether / 12 h / 25 °C 4: 2.) Ag2O, MgSO4 / 1.) xylene, reflux, 5 d; 2.) RT, 12 h 5: 100 percent / HBr / acetic acid / 5 h / Heating 6: 100 percent / cc H2SO4 / 0.5 h / Ambient temperature View Scheme
参考文献
Jung; Lowe III; Lyster; et al.
Tetrahedron, 1984 , vol. 40, # 22 p. 4751 - 4766
参考文献
Feist
Justus Liebigs Annalen der Chemie, 1923 , vol. 433, p. 62
反应条件
1: ammonia / 150 - 160 °C 2: concentrated alkaline solution View Scheme
参考文献
Anschuetz; Bendix; Kerp
Justus Liebigs Annalen der Chemie, 1890 , vol. 259, p. 173,185
反应条件
acetic acid T=55 - 90°C; 77 h;
参考文献
H. LUNDBECK A/S
Patent: US2011/144164 A1, 2011 ;
Location in patent: Page/Page column 17-18 ;
反应条件
acetic acid T=55 - 90°C; 77 h;
参考文献
H. LUNDBECK A/S
Patent: US2011/144164 A1, 2011 ;
Location in patent: Page/Page column 17-18 ;
