hydrogen in neat (no solvent) metal-org. chem. vapor deposition, nitrided (1050°C for 3 min) c-plane (0001) sapphire as substrate, H2 and N2 were used togetehr with Me3In, 500 °C for 1 h; dipping in HCl to eliminate metallic indium;
in gaseous matrix other Radiation; prepd. in low-pressure microwave plasma reactor; solid Me3In vaporized and mixed with Ar, after reactive zone product expanded supersonically, resulted rapid decrease in temp.; nanoparticles obtained;
in tetrahydrofuran under N2; MeInCl2 prepared in situ from Me3In and InCl3; reacted with NC5H4Li in THF;
参考文献
Garcfa, Felipe; Hopkins, Alexander D.; Kowenicki, Richard A.; McPartlin, Mary; Rogers, Michael C.; Silvia, Jared S.; Wright, Dominic S.
Organometallics, 2006 , vol. 25, # 10 p. 2561 - 2568
