N-羟乙基-2-吡咯烷酮合成路线 （共 27 条）
反应条件
Product distribution / selectivity;
参考文献
NIPPON SHOKUBAI CO., LTD.
Patent: WO2006/109869 A1, 2006 ;
Location in patent: Page/Page column 13 ;
反应条件
Ca/Zn oxide T=348°C; 1 h;
参考文献
Kahn, Andrew P.
Patent: US2004/63970 A1, 2004 ;
Location in patent: Page 1 ;
参考文献
US2003/204098 A1, ;
Page/Page column 5 ;
反应条件
0.37 - 1.6 cesium on silica in water T=350 - 375°C; 3 - 95 h; Product distribution / selectivity;
参考文献
Lyondell Chemical Technology, L.P.
Patent: US6982337 B1, 2006 ;
Location in patent: Page/Page column 4-6 ;
反应条件
Product distribution / selectivity;
参考文献
NIPPON SHOKUBAI CO., LTD.
Patent: WO2006/109869 A1, 2006 ;
Location in patent: Page/Page column 13 ;
反应条件
tert.-butylhydroperoxide; ammonium hydroxide in water T=100°C; 16 h;
参考文献
Wu, Xiao-Feng; Sharif, Muhammad; Feng, Jian-Bo; Neumann, Helfried; Pews-Davtyan, Anahit; Langer, Peter; Beller, Matthias
Green Chemistry, 2013 , vol. 15, # 7 p. 1956 - 1961
反应条件
phosphorus tribromide in toluene T=40°C; 20 h;
参考文献
Lisina, N. I.; Chernov, G. A.; Bizunov, Yu. M.; Emel'yanov, V. I.; Knunyants, I. L.
Pharmaceutical Chemistry Journal, 1988 , vol. 22, # 6 p. 472 - 476
Khimiko-Farmatsevticheskii Zhurnal, 1988 , vol. 22, # 6 p. 705 - 710
反应条件
0.37 - 1.6 cesium on silica in water T=350 - 375°C; 3 - 95 h; Product distribution / selectivity;
参考文献
Lyondell Chemical Technology, L.P.
Patent: US6982337 B1, 2006 ;
Location in patent: Page/Page column 4-6 ;
反应条件
1: 1-(2-hydroxy-ethyl)-2-pyrrolidone With triphenylphosphine; diethylazodicarboxylate in tetrahydrofuran; diethyl ether
T=-20°C; 0.5 h;
2: 2-hydroxy-2-methyl-propionitrile in tetrahydrofuran; diethyl ether
T=20°C; Further stages.;
参考文献
Bruno, Claudio; Catalano, Alessia; Desaphy, Jean-Francois; Cavalluzzi, Maria M.; Carocci, Alessia; Dipalma, Antonella; Franchini, Carlo; Lentini, Giovanni; Camerino, Diana Conte; Tortorella, Vincenzo
Heterocycles, 2007 , vol. 71, # 9 p. 2011 - 2026
反应条件
1: With oxalyl dichloride; dimethyl sulfoxide in dichloromethane
T=-78°C; 0.5 h;
2: With triethylamine in dichloromethane
T=-78 - 20°C;
参考文献
SMITHKLINE BEECHAM CORPORATION
Patent: WO2007/19101 A2, 2007 ;
Location in patent: Page/Page column 60-61 ;
