2,2,2-三氟乙酰胺合成路线 （共 158 条）
反应条件
sodium hydride 1.) DMF, 20 deg C, 1 h, 2.) 80 deg C, 18 h; Yield given. Multistep reaction. Yields of byproduct given;
参考文献
Harland, Philip A.; Hodge, Philip; Maughan, Wilfrid; Wildsmith, Eric
Synthesis, 1984 , # 11 p. 941 - 943
反应条件
sodium hydride 1.) DMF, 20 deg C, 1 h, 2.) 80 deg C, 18 h; Yield given. Multistep reaction. Yields of byproduct given;
参考文献
Harland, Philip A.; Hodge, Philip; Maughan, Wilfrid; Wildsmith, Eric
Synthesis, 1984 , # 11 p. 941 - 943
反应条件
sodium hydride 1.) DMF, 20 deg C, 1 h, 2.) 80 deg C, 18 h; Yield given. Multistep reaction. Yields of byproduct given;
参考文献
Harland, Philip A.; Hodge, Philip; Maughan, Wilfrid; Wildsmith, Eric
Synthesis, 1984 , # 11 p. 941 - 943
反应条件
sodium hydride 1.) DMF, 20 deg C, 1 h, 2.) 80 deg C, 18 h; Yield given. Multistep reaction. Yields of byproduct given;
参考文献
Harland, Philip A.; Hodge, Philip; Maughan, Wilfrid; Wildsmith, Eric
Synthesis, 1984 , # 11 p. 941 - 943
反应条件
1: 2: With thionyl chloride
参考文献
MEMORY PHARMACEUTICALS CORPORATION
Patent: WO2004/14911 A1, 2004 ;
Location in patent: Page 43 ;
WO 2004/014911 A1
反应条件
potassium carbonate; N-methyl-2-(methylamino)ethylamine; copper(l) iodide in 1,4-dioxane T=75°C;
参考文献
Tao, Chuan-Zhou; Li, Juan; Fu, Yao; Liu, Lei; Guo, Qing-Xiang
Tetrahedron Letters, 2008 , vol. 49, # 1 p. 70 - 75
反应条件
[2,2']bipyridinyl; palladium (II) trifluoroacetate; Yb(OTf)3*xH2O in nitromethane T=80°C; Petasis Reaction; 15 h;
参考文献
Beisel, Tamara; Manolikakes, Georg
Organic Letters, 2013 , vol. 15, # 23 p. 6046 - 6049
反应条件
potassium carbonate; tetrabutylammomium bromide in acetonitrile T=80°C; 2 h;
参考文献
Landini, Dario; Penso, Michele
Synthetic Communications, 1988 , vol. 18, # 8 p. 791 - 800
反应条件
potassium carbonate; tetrabutylammomium bromide in N,N-dimethyl-formamide T=80°C; 2 h;
参考文献
Landini, Dario; Penso, Michele
Synthetic Communications, 1988 , vol. 18, # 8 p. 791 - 800
反应条件
pyridine; pivaloyl chloride; trifluoroacetic acid T=20°C; 5 h; Product distribution / selectivity;
参考文献
Bayer CropScience AG
Patent: US2010/312002 A1, 2010 ;
Location in patent: Page/Page column 3 ;
