4-羟基-2,3,6-三甲基乙酸苯酯合成路线 （共 22 条）
反应条件
potassium hydroxide; air; aluminosilicate ASHNTS-3 1) octane, reflux, 2) H2O-CH3OH; Yield given. Multistep reaction;
参考文献
Byzova, V. N.; Zakharova, E. I.; Zhukova, E. E.; Sarycheva, I. K.; Evstigneeva, R. P.
Journal of Organic Chemistry USSR (English Translation), 1988 , vol. 24, # 11 p. 2135 - 2140
Zhurnal Organicheskoi Khimii, 1988 , vol. 24, # 11 p. 2368 - 2374
反应条件
trifluorormethanesulfonic acid in Ethylene carbonate; n-heptane T=125 - 140°C; 0.5 h; Heating / reflux;
参考文献
WO2004/46126 A1, ;
Page 10-12 ;
反应条件
hafnium(IV) trifluoromethanesulfonate in Ethylene carbonate; n-heptane T=80 - 140°C; 1.66667 h; Heating / reflux; Product distribution / selectivity;
参考文献
WO2004/63182 A1, ;
Page 11 ;
反应条件
gallium trifluoromethanesulfonate in Ethylene carbonate; n-heptane T=80 - 140°C; 1.08333 h; Heating / reflux; Product distribution / selectivity;
参考文献
WO2004/63182 A1, ;
Page 11 ;
反应条件
silver trifluoromethanesulfonate in toluene T=140 - 145°C; 0.5 h; Heating / reflux; Product distribution / selectivity;
参考文献
WO2004/63182 A1, ;
Page 9 ;
反应条件
toluene-4-sulfonic acid in Ethylene carbonate; n-heptane T=100°C; 0.0833333 h;
参考文献
WO2004/46126 A1, ;
Page 13-15 ;
反应条件
trifluorormethanesulfonic acid in Ethylene carbonate; n-heptane T=125 - 140°C; 0.5 h; Heating / reflux;
参考文献
DSM IP ASSETS B.V.
Patent: WO2004/46126 A1, 2004 ;
Location in patent: Page 10-12 ;
反应条件
hafnium(IV) trifluoromethanesulfonate in Ethylene carbonate; n-heptane T=80 - 140°C; 1.66667 h; Heating / reflux; Product distribution / selectivity;
参考文献
DSM IP ASSETS B.V.
Patent: WO2004/63182 A1, 2004 ;
Location in patent: Page 11 ;
反应条件
gallium trifluoromethanesulfonate in Ethylene carbonate; n-heptane T=80 - 140°C; 1.08333 h; Heating / reflux; Product distribution / selectivity;
参考文献
DSM IP ASSETS B.V.
Patent: WO2005/5407 A1, 2005 ;
Location in patent: Page/Page column 14-15 ;
反应条件
silver trifluoromethanesulfonate in toluene T=140 - 145°C; 0.5 h; Heating / reflux; Product distribution / selectivity;
参考文献
DSM IP ASSETS B.V.
Patent: WO2004/63182 A1, 2004 ;
Location in patent: Page 10 ;
