双-[3-(三乙氧基硅)丙基]-四硫化物合成路线 （共 15 条）
反应条件
1: TESPT With sodium in Solventreg; 140 T=110°C; 0.75 h; 2: octanoic acid chloride in Solventreg; 140 T=45 - 104°C; 1 h; 3: With water in toluene T=45°C; Product distribution / selectivity;
参考文献
General Electric Company
Patent: US6777569 B1, 2004 ;
Location in patent: Page column 9 ;
反应条件
1: TESPT With sodium in Solventreg; 140 T=110°C; 0.75 h; 2: octanoic acid chloride in Solventreg; 140 T=45 - 104°C; 1 h; 3: With water in toluene T=45°C; Product distribution / selectivity;
参考文献
General Electric Company
Patent: US6777569 B1, 2004 ;
Location in patent: Page column 9 ;
反应条件
1: TESPT With sodium in Solventreg; 140 T=110°C; 0.75 h; 2: octanoic acid chloride in Solventreg; 140 T=45 - 104°C; 1 h; 3: With water in toluene T=45°C; Product distribution / selectivity;
参考文献
General Electric Company
Patent: US6777569 B1, 2004 ;
Location in patent: Page column 9 ;
反应条件
1: TESPT With sodium in Solventreg; 140
T=110°C; 0.75 h;
2: octanoic acid chloride in Solventreg; 140
T=45 - 104°C; 1 h;
3: With water in toluene
T=45°C; Product distribution / selectivity;
参考文献
General Electric Company
Patent: US6777569 B1, 2004 ;
Location in patent: Page column 9 ;
反应条件
1: TESPT With sodium in Solventreg; 140
T=110°C; 0.75 h;
2: octanoic acid chloride in Solventreg; 140
T=45 - 104°C; 1 h;
3: With water in toluene
T=45°C; Product distribution / selectivity;
参考文献
General Electric Company
Patent: US6777569 B1, 2004 ;
Location in patent: Page column 9 ;
