2-氯-1,1,1,2-四氟丙烷合成路线 （共 35 条）
反应条件
T=575°C; 3 h; Inert atmosphere;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0119; 0120 ;
反应条件
magnesium(II) fluoride T=450 - 530°C; P=760.051 Torr; 1 - 14 h; Product distribution / selectivity;
参考文献
HONEYWELL INTERNATIONAL INC.
Patent: WO2009/9421 A1, 2009 ;
Location in patent: Page/Page column 7-9 ;
反应条件
carbon T=400°C; 1 h; Inert atmosphere;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0121; 0122; 0123 ;
反应条件
T=400°C; 0.00888889 h; Inert atmosphereGas phase; Product distribution / selectivity;
参考文献
E.I. DU PONT DE NEMOURS AND COMPANY; SUN, Xuehui; NAPPA, Mario Joseph; WANG, Haiyou; KOPKALLI, Haluk
Patent: WO2013/106305 A1, 2013 ;
Location in patent: Page/Page column 11 ;
反应条件
carbon T=400°C; 2 h; Inert atmosphere; Time;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0121; 0122; 0123 ;
反应条件
carbon T=400°C; 6 h; Inert atmosphere; Time;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0121; 0122; 0123 ;
反应条件
T=500°C; Inert atmosphere;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0117; 0118 ;
反应条件
T=603°C; Inert atmosphere; Temperature;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0117; 0118 ;
反应条件
T=575°C; 19 h; Inert atmosphere;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0119; 0120 ;
反应条件
T=500°C; Inert atmosphere;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0117; 0118 ;
