1,1,1,2,3,3-六氟丙烷合成路线 （共 44 条）
反应条件
hydrogen; Pd on alumina; corundum T=105 - 140°C; P=750.075 Torr; Product distribution / selectivity;
参考文献
Arkema France
Patent: US2011/190554 A1, 2011 ;
Location in patent: Page/Page column 3-4 ;
反应条件
hydrogen fluoride; 95atpercent Cr, 5atpercent Zn oxide treated with HF T=300°C; P=760.051 Torr; 0.00833333 h;
参考文献
E. I. DU PONT DE NEMOURS AND COMPANY
Patent: WO2008/60616 A2, 2008 ;
Location in patent: Page/Page column 10-11 ;
反应条件
hydrogen; 3 wt. palladium on activated carbon T=200°C; Gas phase;
参考文献
DAIKIN INDUSTRIES, LTD.
Patent: WO2009/84703 A1, 2009 ;
Location in patent: Page/Page column 21-22; 24 ;
反应条件
cobalt (II) fluoride; fluorine T=250°C; Inert atmosphereLarge scale; ConcentrationTemperature;
参考文献
FOOSUNG CO., LTD.; Cho, ook jae; Ryu, Jae Kug; Kim, Bong Seok; Kim, Donghyun; Park, Byounghun; Park, Su Jin; Jung, Jin-A; Kim, Daewoo
Patent: US2014/135538 A1, 2014 ;
Location in patent: Paragraph 0104-0106 ;
反应条件
cobalt (II) fluoride; fluorine T=250°C; Inert atmosphereLarge scale; ConcentrationTemperature;
参考文献
FOOSUNG CO., LTD.; Cho, ook jae; Ryu, Jae Kug; Kim, Bong Seok; Kim, Donghyun; Park, Byounghun; Park, Su Jin; Jung, Jin-A; Kim, Daewoo
Patent: US2014/135538 A1, 2014 ;
Location in patent: Paragraph 0104-0106 ;
反应条件
SbCl5 on Carbon; hydrogen fluoride T=60 - 85°C;
参考文献
HONEYWELL INTERNATIONAL INC.; Nair, Haridasan K.; Singh, Rajiv Ratna; Nalewajek, David; Poss, Andrew Joseph
Patent: US2013/211155 A1, 2013 ;
Location in patent: Paragraph 0019; 0020 ;
反应条件
fluorine T=150°C; Inert atmosphereLarge scale; ConcentrationTemperature;
参考文献
FOOSUNG CO., LTD.; Cho, ook jae; Ryu, Jae Kug; Kim, Bong Seok; Kim, Donghyun; Park, Byounghun; Park, Su Jin; Jung, Jin-A; Kim, Daewoo
Patent: US2014/135538 A1, 2014 ;
Location in patent: Paragraph 0110-0111 ;
反应条件
hydrogenchloride; hydrogen fluoride; 95percentChromium/2percentSilver Catalyst (calcined at 400 C) T=100°C; P=760.051 Torr; 6 h; Product distribution / selectivity;
参考文献
E. I. DU PONT DE NEMOURS AND COMPANY
Patent: WO2008/79265 A1, 2008 ;
Location in patent: Page/Page column 12-14 ;
反应条件
hydrogen; 0.5 Pd/C T=51°C; Product distribution / selectivity;
参考文献
INEOS FLUOR HOLDINGS LIMITED
Patent: WO2009/138764 A1, 2009 ;
Location in patent: Page/Page column 17-18 ;
反应条件
(NH4)2S2O8; ammonium formate in N,N-dimethyl-formamide T=30 - 40°C;
参考文献
Hu, Chang-Ming; Tu, Ming-Hu
Journal of Fluorine Chemistry, 1991 , vol. 55, # 1 p. 105 - 108
