2,2,2-三氟乙基对甲苯磺酸酯合成路线 （共 41 条）
反应条件
triethylamine in chloroform 6 h; Ambient temperature;
参考文献
Preschera, Dietrich; Thiele, Thomas; Ruhmann, Ralf
Journal of Fluorine Chemistry, 1996 , vol. 79, # 2 p. 145 - 148
反应条件
in diethyl ether; acetone 2 h; Ambient temperature;
参考文献
Meese, C. O.
Synthesis, 1984 , # 12 p. 1041 - 1042
反应条件
1-[hydroxy(tosyloxy)iodo]-1H,1H-perfluoroethane in dichloromethane 2 h; Ambient temperature;
参考文献
Papoutsis, Ioannis; Spyroudis, Spyros; Varvoglis, Anastasios; Callies, Jeffrey A.; Zhdankin, Viktor V.
Tetrahedron Letters, 1997 , vol. 38, # 48 p. 8401 - 8404
反应条件
water T=41.6 - 41.9°C; solvolysis with or withont added electrolytes; Kinetics;
参考文献
Maskill, H.; Jencks, William P.
Journal of the American Chemical Society, 1987 , vol. 109, # 7 p. 2062 - 2070
参考文献
Bentley, T. William; Jones, Robert O; Kang, Dae Ho; Koo, Sun
Journal of Physical Organic Chemistry, 2009 , vol. 22, # 9 p. 799 - 806
反应条件
1: 95 percent / CH2Cl2 / 2 h / Ambient temperature 2: acetonitrile / 8 h / Heating View Scheme
参考文献
Papoutsis, Ioannis; Spyroudis, Spyros; Varvoglis, Anastasios; Callies, Jeffrey A.; Zhdankin, Viktor V.
Tetrahedron Letters, 1997 , vol. 38, # 48 p. 8401 - 8404
反应条件
water; sodium acetate T=42°C; products from solvolysis, containing unbuffered or buffered sodium acetate; Product distribution;
参考文献
Maskill, H.; Jencks, William P.
Journal of the American Chemical Society, 1987 , vol. 109, # 7 p. 2062 - 2070
反应条件
water T=42°C; products from solvolysis in the presence of imidazole buffers; Product distribution;
参考文献
Maskill, H.; Jencks, William P.
Journal of the American Chemical Society, 1987 , vol. 109, # 7 p. 2062 - 2070
反应条件
also with NaOAc or imidazole in water T=42°C; MechanismProduct distributionRate constant;
参考文献
Maskill, H.
Journal of the Chemical Society, Chemical Communications, 1986 , p. 1433 - 1435
反应条件
potassium carbonate in N,N-dimethyl-formamide T=20 - 120°C; 6 h; Inert atmosphere;
参考文献
VIAMET PHARMACEUTICALS, INC.; HOEKSTRA, William J.; SCHOTZINGER, Robert J.; RAFFERTY, Stephen W.
Patent: WO2013/109998 A1, 2013 ;
Location in patent: Page/Page column 41 ;
