1-环己烯-1,2-二甲酸二甲酯合成路线 （共 17 条）
反应条件
in methanol; diethyl ether
参考文献
British Technology Group Limited
Patent: US5464873 A1, 1995 ;
反应条件
copper(l) iodide; lithium diisopropyl amide
1.) THF, HMPA, -90 deg C, 30 min, 2.) -> 0 deg C;
参考文献
Hagiwara, H.; Sugioka, T.; Uda, H.
Synthetic Communications, 1984 , vol. 14, # 13 p. 1193 - 1198
反应条件
in tetrahydrofuran; methanol
12 h;
参考文献
Fields, Stephen C.; Dent III, William H.; Green III, F. Richard; Tromiczak, Eric G.
Tetrahedron Letters, 1996 , vol. 37, # 12 p. 1967 - 1970
参考文献
Siegel; McCaleb
Journal of the American Chemical Society, 1959 , vol. 81, p. 3655,3657
反应条件
1: (i) SOCl2, (ii) Br2, (iii) /BRN= 1098229/
2: NaH / dimethylformamide
View Scheme
参考文献
McDonald,R.N.; Reitz,R.R.
Journal of Organic Chemistry, 1972 , vol. 37, p. 2418 - 2423
反应条件
1: With n-butyllithium; diisopropylamine in tetrahydrofuran
T=-78°C; 0.233333 h; Inert atmosphere;
2: With iodine in tetrahydrofuran
T=-78°C; Overall yield = 75 percent;
参考文献
Malihi, Farzad; Clive, Derrick L. J.; Chang, Che-Chien; Minaruzzaman
Journal of Organic Chemistry, 2013 , vol. 78, # 3 p. 996 - 1013
反应条件
1: LDA / tetrahydrofuran
2: 35 percent Chromat. / tetrahydrofuran; hexamethylphosphoric acid triamide / 10 °C
3: 92 percent / gas / 650 °C
View Scheme
参考文献
Girard, C.; Bloch, R.
Tetrahedron Letters, 1982 , vol. 23, # 36 p. 3683 - 3686
反应条件
2: LDA / tetrahydrofuran
3: 35 percent Chromat. / tetrahydrofuran; hexamethylphosphoric acid triamide / 10 °C
4: 92 percent / gas / 650 °C
View Scheme
参考文献
Girard, C.; Bloch, R.
Tetrahedron Letters, 1982 , vol. 23, # 36 p. 3683 - 3686
反应条件
toluene-4-sulfonic acid
参考文献
Du Pont de Nemours and Co.
Patent: US2870196 , 1954 ;
反应条件
1.1: acetic acid; sodium nitrite / dimethyl sulfoxide / 8 h / 40 °C / |Inert atmosphere
2.1: diethyl ether / 0 °C / |Inert atmosphere
3.1: n-butyllithium; diisopropylamine / tetrahydrofuran / 0.23 h / -78 °C / |Inert atmosphere
3.2: -78 °C
View Scheme
参考文献
Malihi, Farzad; Clive, Derrick L. J.; Chang, Che-Chien; Minaruzzaman
Journal of Organic Chemistry, 2013 , vol. 78, # 3 p. 996 - 1013
