甲基3-甲酰氨基-4-甲基-2-噻吩羧酸酯合成路线 (共 5 条)
反应条件
ammonium formate in formamide
参考文献
Board of Regents, The University of Texas System
Patent: US6503914 B1, 2003 ;
反应条件
1.1: ammonium formate / formamide / 18 h / 160 °C 1.2: 0.5 h 2.1: trichlorophosphate / 3 h / Reflux View Scheme
参考文献
CENTRO NACIONAL DE INVESTIGACIONES ONCOLOGICAS (CNIO); PASTOR FERNANDEZ, Joaquin; ALVAREZ ESCOBAR, Rosa Maria; RIESCO FAGUNDO, Rosario Concepcion; GARCIA GARCIA, Ana Belen; RODRIGUEZ HERGUETA, Antonio; MARTIN HERNANDO, Jose Ignacio; BLANCO APARICIO, Carmen; CEBRIAN MUNOZ, David Alvaro
Patent: WO2012/156756 A2, 2012 ;
WO 2012/156756 A2
反应条件
1: With ammonium formate in formamide T=160°C; 18 h; 2: 0.5 h;
参考文献
CENTRO NACIONAL DE INVESTIGACIONES ONCOLOGICAS (CNIO); PASTOR FERNANDEZ, Joaquin; ALVAREZ ESCOBAR, Rosa Maria; RIESCO FAGUNDO, Rosario Concepcion; GARCIA GARCIA, Ana Belen; RODRIGUEZ HERGUETA, Antonio; MARTIN HERNANDO, Jose Ignacio; BLANCO APARICIO, Carmen; CEBRIAN MUNOZ, David Alvaro
Patent: WO2012/156756 A2, 2012 ;
Location in patent: Page/Page column 83-84 ;
WO 2012/156756 A2
反应条件
ammonium formate in formamide
参考文献
Board of Regents, The University of Texas System
Patent: US6503914 B1, 2003 ;
反应条件
1: formic acid With acetic anhydride
T=0°C;
2: 3-amino-4-methyl-2-thiophenecarboxylic acid methyl ester T=0 - 20°C; 4 h;
参考文献
Thrash, Thomas; Cabell, Larry A.; Lohse, Daniel; Budde, Raymond J.A.
Patent: US2006/4002 A1, 2006 ;
Location in patent: Page/Page column 11; 21; 23; 30; 31 ;