1,1,1,3,3-五氟丙烷合成路线 （共 90 条）
反应条件
hydrogen fluoride; fluorided chromium-carrying activated carbon T=400°C; 3 h; Inert atmosphere; Product distribution / selectivity;
参考文献
Central Glass Company, Limited
Patent: US2012/123172 A1, 2012 ;
Location in patent: Page/Page column 13 ;
反应条件
hydrogen fluoride; mixture of CrCl3, ZnCl2, Na2SiO3and Al(NO3)3*9H2O; treated with HF T=220 - 240°C; Gas phase; Product distribution / selectivity;
参考文献
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Patent: US2007/27348 A1, 2007 ;
Location in patent: Page/Page column 7 ;
反应条件
hydrogen fluoride; Magtrievetrade; T=269°C; P=760.051 Torr; Inert atmosphere; Product distribution / selectivity;
参考文献
DAIKIN INDUSTRIES, LTD.; NOSE, Masatoshi; TAKAHASHI, Kazuhiro; KOMATSU, Yuzo; SUGIYAMA, Akinari; SHIBANUMA, Takashi
Patent: WO2010/50373 A2, 2010 ;
Location in patent: Page/Page column 19; 20 ;
反应条件
hydrogen fluoride; oxygen T=350°C; 0.3 h; Reagent/catalystTime; Overall yield = 94 percentChromat.; chemoselective reaction;
参考文献
DAIKIN INDUSTRIES, LTD.; KARUBE, Daisuke; CHAKI, Takehiro; NISHIUMI, Masami; SHIBANUMA, Takashi; ARAI, Masashi
Patent: WO2013/111911 A1, 2013 ;
Location in patent: Page/Page column 29 ;
反应条件
hydrogen fluoride; fluorinated Cr2O3 T=310°C; P=2052.96 Torr; Industry scale; Product distribution / selectivity;
参考文献
HONEYWELL INTERNATIONAL INC.
Patent: US2011/201853 A1, 2011 ;
Location in patent: Page/Page column 15 ;
反应条件
SbCl5 on Carbon; hydrogen fluoride T=85°C; 0.000555556 - 0.00277778 h;
参考文献
HONEYWELL INTERNATIONAL INC.; Nair, Haridasan K.; Singh, Rajiv Ratna; Poss, Andrew Joseph; Nalewajek, David
Patent: US2013/211156 A1, 2013 ;
Location in patent: Paragraph 0026 ;
反应条件
hydrogen fluoride; SbF5 T=350°C; 0.000502778 h; Product distribution; Further Variations:ReagentsTemperatures;
参考文献
Central Glass Company, Limited
Patent: US2012/65435 A1, 2012 ;
Location in patent: Page/Page column 9 ;
反应条件
hydrogen fluoride T=275°C; Inert atmosphere;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0106; 0107 ;
反应条件
hydrogen fluoride T=325°C; Inert atmosphere; Temperature;
参考文献
E. I. du Pont de Nemours and Company; Mahler, Barry Asher; Nappa, Mario Joseph
Patent: EP2634165 A2, 2013 ;
Location in patent: Paragraph 0106; 0107 ;
反应条件
hydrogen fluoride; fluorinated Cr2O3 T=275 - 335°C; P=863.483 Torr; Inert atmosphereGas phase; Product distribution / selectivity;
参考文献
HONEYWELL INTERNATIONAL INC.
Patent: US2012/172636 A1, 2012 ;
Location in patent: Page/Page column 4-5 ;
