1,1,1,3,3-五氟丙烷合成路线 （共 90 条）
反应条件
chlorine
T=2 - 3°C; 3 h; Irradiation;
参考文献
E.I. DUPONT DE NEMOURS AND COMPANY
Patent: WO2006/69105 A1, 2006 ;
Location in patent: Page/Page column 12 ;
反应条件
chlorine
T=20°C; 0.00472222 h; Irradiation;
参考文献
E.I. DUPONT DE NEMOURS AND COMPANY
Patent: WO2006/69105 A1, 2006 ;
Location in patent: Page/Page column 13 ;
反应条件
chlorine
T=20°C; 0.00305556 - 0.00472222 h; Irradiation; Product distribution / selectivity;
参考文献
E.I. DUPONT DE NEMOURS AND COMPANY
Patent: WO2006/69105 A1, 2006 ;
Location in patent: Page/Page column 13 ;
反应条件
chlorine
1 h; Gas phasePhotolysis; Product distribution / selectivity;
参考文献
E.I. DUPONT DE NEMOURS AND COMPANY
Patent: WO2006/69105 A1, 2006 ;
Location in patent: Page/Page column 11-12 ;
反应条件
chlorine
T=2 - 3°C; 3 h; Irradiation;
参考文献
E.I. DUPONT DE NEMOURS AND COMPANY
Patent: WO2006/69105 A1, 2006 ;
Location in patent: Page/Page column 12 ;
反应条件
chlorine
T=20°C; 0.00166667 h; Irradiation;
参考文献
E.I. DUPONT DE NEMOURS AND COMPANY
Patent: WO2006/69105 A1, 2006 ;
Location in patent: Page/Page column 14 ;
反应条件
chlorine
T=20°C; 0.00472222 h; Irradiation;
参考文献
E.I. DUPONT DE NEMOURS AND COMPANY
Patent: WO2006/69105 A1, 2006 ;
Location in patent: Page/Page column 13 ;
反应条件
chlorine
T=20°C; 0.00305556 - 0.00472222 h; Irradiation; Product distribution / selectivity;
参考文献
E.I. DUPONT DE NEMOURS AND COMPANY
Patent: WO2006/69105 A1, 2006 ;
Location in patent: Page/Page column 13 ;
反应条件
chlorine
T=23.9°C; P=700 Torr; Irradiation; Rate constant;
参考文献
Chen, Junyi; Young, Valerie; Niki, Hiromi; Magid, Hillel
Journal of Physical Chemistry A, 1997 , vol. 101, # 14 p. 2648 - 2653
反应条件
n-BuLi in diethyl ether
under N2 atm. soln. CF3CH2CF2H in Et2O at -10°C was treated with n-BuLi, after 10 min Ph3SnCl in Et2O was added and stirred at 0°Covernight and warmed to room temp.; hexane was added, soln. was filtered, concd. in vacuo, and chromed. on silica; elem. anal.;
参考文献
Brisdon, Alan K.; Crossley, Ian R.; Pritchard, Robin G.; Sadiq, Ghazala; Warren, John E.
Organometallics, 2003 , vol. 22, # 26 p. 5534 - 5542
