3-(4-甲基苯基)-1,3-恶唑烷-2-酮合成路线 （共 10 条）
反应条件
potassium cyanide; 18-crown-6 ether T=100°C; 12 h; Neat (no solvent);
参考文献
Taniguchi, Tsuyoshi; Goto, Naoya; Ishibashi, Hiroyuki
Tetrahedron Letters, 2009 , vol. 50, # 34 p. 4857 - 4858
反应条件
copper(l) iodide; N,N-dimethylaminoacetic acid; potassium carbonate in N,N-dimethyl-formamide
T=120°C; 24 h; Inert atmosphere;
参考文献
Li, Jiaojiao; Zhang, Yihua; Jiang, Yongwen; Ma, Dawei
Tetrahedron Letters, 2012 , vol. 53, # 31 p. 3981 - 3983
反应条件
copper diacetate; triethylamine in dichloromethane
T=40°C; 48 h;
参考文献
Rasmussen, L. Kyhn; Begtrup, Mikael; Ruhland, Thomas
Journal of Organic Chemistry, 2004 , vol. 69, # 20 p. 6890 - 6893
反应条件
triethylamine; cupric acetate immobilized onto Wang resin in dichloromethane
T=20°C; 24 h;
参考文献
Chiang, Gary C. H.; Olsson, Thomas
Organic Letters, 2004 , vol. 6, # 18 p. 3079 - 3082
反应条件
1,4-diaza-bicyclo[2.2.2]octane
T=100°C; 5 h; Inert atmosphere;
参考文献
Gong, Hang; Yang, Nian-Fa; Deng, Guo-Jun; Xu, Guang-Yi
Chemistry Letters, 2009 , vol. 38, # 6 p. 584 - 585
反应条件
triethylamine in dichloromethane
T=20 - 45°C; Inert atmosphereHeating;
参考文献
Xie, Chunsong; Han, Deyu; Liu, Jinhua; Xie, Tian
Synlett, 2009 , # 19 p. 3155 - 3158
反应条件
sodium ethanolate in 1,4-dioxane; ethanol
T=70 - 80°C; 2 h;
参考文献
Oda,R. et al.
Bulletin of the Chemical Society of Japan, 1962 , vol. 35, p. 1309 - 1312
反应条件
[N-butylthiazolium][Br]; [C4C1im][MeCO2]
T=20 - 140°C; P=7500.75 - 18751.9 Torr; 9 h; Autoclave;
参考文献
Wang, Binshen; Elageed, Elnazeer H.M.; Zhang, Dawei; Yang, Sijuan; Wu, Shi; Zhang, Guirong; Gao, Guohua
ChemCatChem, 2014 , vol. 6, # 1 p. 278 - 283
反应条件
1: K2CO3 / acetonitrile / 1 h / 20 °C
2: 3.12 g / acetonitrile / 15 h / 80 °C
View Scheme
参考文献
Morita, Yasuhiro; Ishigaki, Takeshi; Kawamura, Kuniaki; Iseki, Katsuhiko
Synthesis, 2007 , # 16 p. 2517 - 2523
反应条件
1,8-diazabicyclo[5.4.0]undec-7-ene; bis(1,5-cyclooctadiene)nickel (0); tri-cyclo-hexyl-phosphine in toluene
T=100°C; 30 h; Conversion of starting material;
参考文献
E.I. DU PONT DE NEMOURS AND COMPANY
Patent: EP1178040 A1, 2002 ;
Location in patent: Page 6, 9 ;
