54509-73-8合成路线 （共 3623 条）
反应条件
in neat (no solvent) SiH4 and ethylene at about 400°C;;
参考文献
Gmelin Handbook: Si: MVol.C, 33, page 103 - 105
参考文献
Baeckvall,J.E.
Tetrahedron Letters, 1978 , p. 163 - 166
反应条件
di-tert-butyl peroxide T=130°C; P=2206520 Torr;
参考文献
Journal of the American Chemical Society, , vol. 78, p. 5606,5608
US2680763 , ;
反应条件
T=130°C; P=2206520 Torr;
参考文献
Journal of the American Chemical Society, , vol. 78, p. 5606,5608
反应条件
synthetic air; oxygen in gaseous matrix Kinetics; C2H4, CO and synthetic air mixture addn. into O3/O2 flow;
参考文献
Mihelcic; Heitlinger; Kley; Muesgen; Volz-Thomas
Chemical Physics Letters, 1999 , vol. 301, # 5-6 p. 559 - 564
反应条件
synthetic air; oxygen in gaseous matrix Kinetics; byproducts: hydroxyethylperoxy radical; C2H4 (1-3 ml/min) and synthetic air (3 ml/min) mixture addn. into O3/O2 flow;
参考文献
Chemical Physics Letters, , vol. 301, # 5-6 p. 559 - 564
反应条件
oxygen microwave discharge excitation of O2, flow system;
参考文献
Holstein, K. J.; Fink, E. H.; Wildt, J.; Winter, R.; Zabel, F.
Journal of Physical Chemistry, 1983 , vol. 87, p. 3943 - 3948
反应条件
copper(l) chloride in neat (no solvent) mixt. of Ge and CuCl was pretreated at 450°C for 1 h under He; mixt. of HCl and C2H4 was fed at 450°C; not isolated; gas chromd.;
参考文献
Okamoto, Masaki; Chikamori, Takehiko; Asano, Takuya; Suzuki, Eiichi
Organometallics, 2004 , vol. 23, # 3 p. 595 - 599
反应条件
T=250°C; P=12929 Torr; 132 h; Autoclave;
参考文献
ACS Catalysis, , vol. 3, # 8 p. 1768 - 1773
反应条件
T=250°C; P=31029.7 Torr; 24 h; Autoclave; TimePressure;
参考文献
ACS Catalysis, , vol. 3, # 8 p. 1768 - 1773
