oxygen in neat (no solvent) Ru films prepared by metallorganic chemical vapor deposition process, films deposited on SiO2, Si3N4, TiN, TiO2, Ta2O5 substrate layers at 300-350 °C; source temp. 85 °C, Ar flow rate 100 sccm, O2 flow rate 100-200 sccm, pressure 3 Torr;